Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• The accurate alloy composition of a nonpolar InGaN grown on m-plane GaN is estimated from X-ray reciprocal-space maps (RSMs) of (20\bar{2}1) and (21\bar{3}0) diffractions. In this estimation, the anisotropic residual strain in m-plane is carefully considered. In order to avoide the error which may be generated by the anisotropic strain and tilted domains in the film of InGaN, the lattice constants along m-, a-, and c-directions are determined using a pair of two RSMs normalized to the unit reciprocal vector along m-direction. The indium content of InGaN is derived from RSMs data using Poisson effect and Vegard's law. Based on this method, the incorporation of indium into InGaN is investigated. This incorporation is found to be promoted with the increase in the substrate miscut angle and the growth rate. From the precise analysis of RSMs, some of the InGaN domains on m-plane GaN substrates are found to be tilted toward \pm a-direction despite of the substrate miscut toward c-direction.

• 2012-04-25

著者

• Hanada Takashi

  Institute For Materials Research Tohoku University

• Katayama Ryuji

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Matsuoka Takashi

  Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Matsuoka Takashi

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Shojiki Kanako

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Shimada Takaaki

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Liu Yuhuai

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• KATAYAMA Ryuji

  Institute for Materials Research, Tohoku University

• Hanada Takashi

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

関連論文

• Ordering of In and Ga in Epitaxially Grown In_Ga_As Films on (001) InP Substrates
• Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN (Special Issue : Solid State Devices and Materials (2))
• Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy
• Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs
• Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

スポンサーリンク