Enhanced optical absorption due to E

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概要

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• The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E<inf>+</inf>and E<inf>−</inf>, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E<inf>−</inf>band, an abrupt absorption edge originating from the electron transition between the valence band and an E<inf>+</inf>-related miniband is observed at 1.6 eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.

• Institute of Physicsの論文
• 2014-09-26

著者

• YAGI Shuhei

  Graduate School of Science and Engineering, Saitama University

関連論文

• Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs
• Enhanced optical absorption due to E

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