Optimization of Well Width and N Content for Optical Properties of GaNAs/GaAs Multiple Quantum Well Grown by RF-Molecular Beam Epitaxy

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概要

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• We have investigated the optical properties in GaNAs/GaAs multiple quantum wells (MQWs) with various GaNAs layer widths and N contents, which were fabricated on GaAs(001) substrates by molecular beam epitaxy using an RF-plasma source. In particular, when the GaNAs layer thickness, $L_{\text{W}}$, was 3 monolayers (ML), the photoluminescence (PL) peak intensity around 1.31 eV was approximately 70 times stronger than that in the case of $L_{\text{W}}=10$ ML. Moreover, the full width at half maximum of the dominant PL peak became narrow as GaNAs layer thickness decreased, even though N content was increased.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Itoh Hiroshi

  Faculty Of Animal Science Kitasato University

• Miyagawa Hayato

  Faculty Of Engineering Kagawa University

• Nakanishi Shunsuke

  Faculty Of Engineering Kagawa University

• Fujii Kensuke

  Faculty Of Engineering Kagawa University

• KOSHIBA Shyun

  Faculty of Engineering, Kagawa University

• Akiyama Hidefumi

  Institute For Solid State Physics University Of Tokyo

• Tsurumachi Noriaki

  Faculty Of Engineering Kagawa University

• Nakase Daisuke

  Faculty Of Engineering Kagawa University

• Koshiba Shyun

  Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Miyagawa Hayato

  Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Nakase Daisuke

  Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Akiyama Hidefumi

  Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

• Fujii Kensuke

  Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Nakanishi Shunsuke

  Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

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