Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-08-01
著者
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Akita Katsushi
Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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YAFUNE Norimasa
Sharp Corporation
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HASHIMOTO Shin
Sumitomo Electric Industries, Ltd.
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YAMAMOTO Yoshiyuki
Sumitomo Electric Industries, Ltd.
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HATANO Maiko
the Graduate School of Engineering, University of Fukui
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TOKUDA Hirokuni
the Graduate School of Engineering, University of Fukui
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KUZUHARA Masaaki
the Graduate School of Engineering, University of Fukui
関連論文
- High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
- Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures
- Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes