Akita Katsushi | Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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概要
- Akita Katsushiの詳細を見る
- 同名の論文著者
- Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japanの論文著者
関連著者
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Akita Katsushi
Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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YAFUNE Norimasa
Sharp Corporation
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HASHIMOTO Shin
Sumitomo Electric Industries, Ltd.
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YAMAMOTO Yoshiyuki
Sumitomo Electric Industries, Ltd.
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HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
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NAKAMURA Takao
Sumitomo Electric Industries, Ltd.
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Hashimoto Shin
Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
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Yafune Norimasa
Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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Yamamoto Yoshiyuki
Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
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Kuzuhara Masaaki
Graduate School Of Engineering University Of Fukui
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AKITA Katsushi
Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories
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Ishibashi Koji
Riken Saitama Jpn
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Kyono Takashi
Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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Akita Katsushi
Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories, 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Akita Katsushi
Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
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Tokuda Hirokuni
University of Fukui, Fukui 910-8507, Japan
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Kuzuhara Masaaki
Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan
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Kuzuhara Masaaki
University of Fukui, Fukui 910-8507, Japan
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Ishibashi Koji
RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
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Hatano Maiko
University of Fukui, Fukui 910-8507, Japan
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Yafune Norimasa
Sharp Corporation, Tenri, Nara 632-8567, Japan
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HATANO Maiko
the Graduate School of Engineering, University of Fukui
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TOKUDA Hirokuni
the Graduate School of Engineering, University of Fukui
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KUZUHARA Masaaki
the Graduate School of Engineering, University of Fukui
著作論文
- High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
- Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes