Yafune Norimasa | Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

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概要

• 同名の論文著者
• Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japanの論文著者

関連著者

• Yafune Norimasa

  Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• YAFUNE Norimasa

  Sharp Corporation

• Akita Katsushi

  Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan

• Hashimoto Shin

  Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan

• Yamamoto Yoshiyuki

  Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan

• HASHIMOTO Shin

  Sumitomo Electric Industries, Ltd.

• YAMAMOTO Yoshiyuki

  Sumitomo Electric Industries, Ltd.

• Kuzuhara Masaaki

  Graduate School Of Engineering University Of Fukui

• Nagamori Motoi

  Graduate School Of Engineering University Of Fukui

• Chikaoka Hironari

  Graduate School Of Engineering University Of Fukui

• Motoi Nagamori

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• Hironari Chikaoka

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• Akita Katsushi

  Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan

• Tokuda Hirokuni

  University of Fukui, Fukui 910-8507, Japan

• Fuminao Watanabe

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• Keiichi Sakuno

  Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Masaaki Kuzuhara

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• Kuzuhara Masaaki

  Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan

• Kuzuhara Masaaki

  University of Fukui, Fukui 910-8507, Japan

• Hatano Maiko

  University of Fukui, Fukui 910-8507, Japan

• Yafune Norimasa

  Sharp Corporation, Tenri, Nara 632-8567, Japan

もっと見る 閉じる

著作論文

• High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
• Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures
• Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

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