Optimum Atomic Spacing for AlAs Etching in GaAs Epitaxial Lift-Off Technology
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概要
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With respect to GaAs epitaxial lift-off technology, we report here the optimum atomic spacing(5-10nm)needed to etch off the AlAs release layer that is sandwiched between two GaAs epitaxial layers. The AlAs etching rate in hydrofluoric acid based solutions was monitored as a function of release layer thickness. We found a sudden quenching in the etching rate, approximately 20 times that of the peak value, at lower dimensions(〜2.5nm)of the AlAs epitaxial layer. Since this cannot be explained on the basis of a previous theory(inverse square root of release layer thickness), we propose a diffusion-limited mechanism to explain this reaction process. With the diffusion constant being a mean-free-path-dependent parameter, a relation between the mean free path and the width of the channel is considered. This relation is in reasonable agreement with the experimental results and gives a good physical insight to the reaction kinetics.
- 社団法人応用物理学会の論文
- 2000-05-15
著者
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Yokoyama Shin
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Rao Kota
Department Of Physics Indian Institute Of Science
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Hirose Masataka
Research Center For Nanodevices And Systems Hiroshima University
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Hirose Masataka
Research Center For Integrated Systems Hiroshima University
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Katayama Takeshi
Research Center For Nanodevices And Systems Hiroshima University
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Koteswara Rao
Department of Physics, Indian Institute of Science
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