Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
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概要
- 論文の詳細を見る
The influence of organic contaminants on process-induced interface trap generation and oxide reliability has been investigated using $n$-type metal oxide semiconductor field-effect transistors (MOSFETs) and capacitors. It has been observed that adsorption of organic contaminants on the silicon surface causes the formation of Si/SiO2 interface traps and significantly reduces the oxide reliability. The degree of these effects showed strong dependence on the stage of contamination in the process flow. Postoxidation contaminated devices exhibit lower interface trap density and higher reliability compared with preoxidation contaminated devices even though the total amount of organic adhesives on the postoxidation contaminated surface is higher.
- Japan Society of Applied Physicsの論文
- 2003-12-01
著者
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Khosru Quazi
Research Center For Nanodevices And Systems Hiroshima University
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Yoshino Takenobu
Research Center For Nanodevices And Systems Hiroshima University
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
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Shibahara Kentaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Khosru Quazi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Yoshino Takenobu
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Sunami Hideo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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