Integration of Self-Assembled Porous Silica in Low-$k$/Cu Damascene Interconnects
スポンサーリンク
概要
- 論文の詳細を見る
Integration of a self-assembled porous silica film layered with a cap film was carried out for low-$k$/Cu damascene structures. The dielectric constant of the porous silica in the layered damascene structure was extracted, and the process-induced damage layer was characterized. Due to the integration process of low-$k$/Cu damascene, the hydrophobic methyl group was decomposed by plasma etching and subsequent barrier and seed sputtering as well as by Cu electroplating, resulting in the formation of hydrophilic silanol groups. The lateral dimension of the process-induced damaged layer and its effective dielectric constant were found to be 35 nm and 10, respectively.
- 2009-09-25
著者
-
YOSHINO Takenobu
MIRAI-Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scien
-
NAKAYAMA Takahiro
MIRAI-ASET
-
YAGI Ryotaro
MIRAI-ASET
-
FUJII Nobutoshi
MIRAI-ASET
-
Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
-
Shishida Yoshinori
Mirai-association Of Super-advanced Electronics Technologies
-
Hata Nobuhiro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
-
Seino Yutaka
Mirai Advanced Semiconductor Research Center Aist
-
Shimoyama Masashi
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
-
Chikaki Shinichi
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
-
Ono Tetsuo
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
-
Sonoda Yuzuru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
-
Kinoshita Keizo
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
-
Kinoshita Keizo
MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Sonoda Yuzuru
MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Shishida Yoshinori
MIRAI—Association of Super-Advanced Electronics Technology (ASET), Tsukuba, Ibaraki 305-8569, Japan
-
Shishida Yoshinori
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
-
Hata Nobuhiro
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
-
Yoshino Takenobu
MIRAI—Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
-
Ono Tetsuo
MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
-
Nakayama Takahiro
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
関連論文
- Effect of High-Resistivity Si Substrate on Antenna Transmission Gain for On-Chip Wireless Interconnects
- Simple Models on Enhancement of Mechanical Properties of Porous Silica Low-k Films by Tetramethylcyclotetrasiloxane(TMCTS) Vapor Annealing Treatment
- A 2.4GHz Differential Wavelet Generator in 0.18μm CMOS for 1.4Gbps UWB Impulse Radio in Wireless Inter/Intra-Chip Data Communication
- Transmission Characteristics of Gaussian Monocycle Pulses for Inter-Chip Wireless Interconnections Using Integrated Antennas
- A CMOS Monocycle Pulse Generation Circuit of UWB Transmitter for Intra/Inter Chip Wireless Interconnection
- Plasma-enhanced polymerization thin films as a drift barrier for Cu interconnects
- Mechanical Strength of Multilayered Dielectric Structures Measured by Laser-Pulse Generated Surface-Acoustic-Wave Technique
- Theoretical Investigation of Dielectric Constant and Elastic Modulus of Two-Dimensional Periodic Porous Silica Films with Elliptical Cylindrical Pores
- Mechanical Property Determination of Thin Porous Low-k Films by Twin-Transducer Laser Generated Surface Acoustic Waves
- Theoretical Analysis of Elastic Modulus and Dielectric Constant for Low-k Two-Dimensional Periodic Porous Silica Films
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Measurement of Copper Drift in Methylsilsesquiazane-Methylsilsesquioxane Dielectric Films
- Measurement of Copper Drift in Methylsilsesquioxane Dielectric Films
- Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics
- Electrical Properties of TiO/LaTiO/TiO Stacked Thin Films
- Confocal Imaging System Using High-Speed Sampling Circuit and Ultra-Wideband Slot Antenna
- A 5.4--9.2 GHz 19.5 dB Complementary Metal--Oxide--Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier
- Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing
- Nondestructive characterization of dielectric stack structures by laser-pulse-generated surface acoustic wave analysis
- The structural origin of determining the coefficient of thermal expansion for porous silica low-k films
- Nondestructive characterization of temperature-dependent backbone Si-O-Si structure in porous silica films by in-situ Fourier-transform infrared spectroscopy
- Infrared Complex Dielectric Function Analysis for Chemical Bonding Structure of Porous Silica Low Dielectric Constant Films
- Adsorption in-situ Spectroscopic Ellipsometry Analysis of Disordered Porous Silica Low-k Films
- Comparison of Pore Shape Models for Small Angle X-ray Scattering of a Disordered Porous Silica Low-k Film
- Electrical Characteristics of Porous Zeolite Interlayer Dielectrics
- Microstructure Characterization of Skeletal Silica in Porous Low-k Films by Infrared Spectroscopic Ellipsometry
- Influence of Bottom Electrodes and Interface Layers on (Ba,Sr)TiO3 Thin Film Leakage Current
- Pure Silica Zeolite Films Prepared by a Vapor Phase Transport Method
- Electrical Characteristics of Mesoporous Pure-Silica–Zeolite Film
- Integration of Self-Assembled Porous Silica in Low-$k$/Cu Damascene Interconnects
- A Novel Photosensitive Porous Low-$k$ Interlayer Dielectric Film
- A 1Gb/s 3.8 pJ/bit Differential Input BPSK Detection Scheme for UWB-IR Communication Using 180nm CMOS Technology
- UWB Imaging for Early Breast Cancer Detection by Confocal Algorithm
- Ionic Conduction Leakage Current in Porous Silica Films
- Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-$k$/Cu Interconnects
- Confocal Imaging Using Ultra Wideband Antenna Array on Si Substrates for Breast Cancer Detection
- A 500Mb/s Differential Input Non-coherent BPSK Receiver for UWB-IR Communication
- Molecular Orbital Calculation of the Elastic Modulus and the Dielectric Constant for Ultra Low-$k$ Organic Polymers
- A 2Gb/s 1.8pJ/bit Differential BPSK UWB-IR Transmitter Using 65nm CMOS Technology
- Plasma-Enhanced-Polymerization Thin-Film as a Drift Barrier for Cu Ions
- Plasma Etch Rates of Porous Silica Low-$k$ Films with Different Dielectric Constants
- Recovery from Plasma-Process-Induced Damage in Porous Silica Low-$k$ Films by Organosiloxane Vapor Annealing
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Mechanical Property and Network Structure of Porous Silica Films
- Theoretical Investigation of Dielectric Constant and Elastic Modulus of Three-Dimensional Isotropic Porous Silica Films with Cubic and Disordered Pore Arrangements
- Analysis of Transmission Characteristics of Gaussian Monocycle Pulses for Silicon Integrated Antennas
- Effects of Surfactants on the Properties of Ordered Periodic Porous Silica Films
- Nondestructive Characterization of a Series of Periodic Porous Silica Films by in situ Spectroscopic Ellipsometry in a Vapor Cell
- Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics
- Early Breast Cancer Detection by Ultrawide Band Imaging with Dispersion Consideration
- Characteristics of Si Integrated Antenna for Inter-Chip Wireless Interconnection
- Signal Transmission Characteristics between Si Chips with Air Gap using Si Integrated Dipole Antennas
- A 2.4 GHz Differential Wavelet Generator in 0.18 μm Complementary Metal–Oxide–Semiconductor for 1.4 Gbps Ultra-Wideband Impulse Radio in Wireless Inter/Intra-Chip Data Communication
- Properties of Sr7Nb13O36/Nb2O5/Sr7Nb13O36 Laminated Films for Gigabit Memory Capacitors
- Characteristics of Integrated Antenna on Si for On-Chip Wireless Interconnect
- Theoretical Investigation of Maximum Field Strength in Porous Silica Dielectric
- Effect of Water Adsorption on Electrical Characteristics of Porous Silica Films
- A CMOS Monocycle Pulse Generation Circuit in a Ultra-Wideband Transmitter for Intra/Inter Chip Wireless Interconnection
- Theoretical Investigation into Effects of Pore Size and Pore Position Distributions on Dielectric Constant and Elastic Modulus of Two-Dimensional Periodic Porous Silica Films
- Control of Pore Structures in Periodic Porous Silica Low-$k$ Films
- Low-$k$ Dielectric Film Patterning by X-Ray Lithography