Effects of Surfactants on the Properties of Ordered Periodic Porous Silica Films
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概要
- 論文の詳細を見る
We report the effects of surfactants on the properties of ordered periodic porous silica films. Silica films with a periodically ordered structure were synthesized on crystalline silicon substrates by spin-coating an alkoxysilane solution mixed with a self-assembling template and a cationic alkyltrimethylammonium chloride (ATMACl, CH3(CH2)n-1N(CH3)3 Cl) surfactant, where $n$ was 12, 14, or 16. The effects of surfactants on the properties of porous silica films with a periodic pore structure were investigated. Both dielectric constant and refractive index decreased with the length of alkylchain in the template molecule ATMACl. The pore structure was successfully controlled by the alkylchain length of the template molecule when the tetraethyl-orthosilicate (TEOS) vapor treatment was applied.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Oku Yoshiaki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Yamada Kazuhiro
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Kikkawa Takamaro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Takada Syozo
Mirai Project Advanced Semiconductor Research Center (asrc)
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Hata Nobuhiro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Yamada Kazuhiro
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takada Syozo
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hata Nobuhiro
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kikkawa Takamaro
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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