Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-$k$/Cu Interconnects
スポンサーリンク
概要
- 論文の詳細を見る
A plasma-enhanced co-polymerization technique was developed for low-$k$/Cu damascene integration on 300 mm wafers. This technique enables us to control dielectric film properties by introducing organo-siloxane and hydrocarbon into a He-plasma. The growth rate of the low-$k$ film derived from divinyl siloxane–benzocyclobutene (DVS–BCB) as a matrix monomer is increased by adding C2H2 as a deposition acceleration monomer and the Young’s modulus was enhanced by adding diisopropenylbenzene (DIPB) or divinylbenzene (DVB) as a reinforcement monomer. Cu damascene interconnects with plasma polymerized low-$k$ films were successfully fabricated on 300 mm wafers.
- 2007-07-15
著者
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Kawahara Jun
Mirai-association Of Super-advanced Electronics Technology (aset)
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YOSHINO Takenobu
MIRAI-Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scien
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Matsuo Hisanori
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Miyoshi Hidenori
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Kikkawa Takamaro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Takada Syozo
Mirai Project Advanced Semiconductor Research Center (asrc)
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ISHIKAWA Akira
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Seino Yutaka
Mirai Advanced Semiconductor Research Center Aist
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Sonoda Yuzuru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Kinoshita Keizo
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Kinoshita Keizo
MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sonoda Yuzuru
MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nakano Akinori
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Kunimi Nobutaka
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Hayashi Yoshihiro
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ogata Tetsuro
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Goto Takashi
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Takada Syozo
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Yoshino Takenobu
MIRAI—Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Seino Yutaka
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Kawahara Jun
MIRAI—Association of Super-Advanced Electronics Technology (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Kawahara Jun
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Matsuo Hisanori
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Kikkawa Takamaro
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
関連論文
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- Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-$k$/Cu Interconnects
- Molecular Orbital Calculation of the Elastic Modulus and the Dielectric Constant for Ultra Low-$k$ Organic Polymers
- Plasma-Enhanced-Polymerization Thin-Film as a Drift Barrier for Cu Ions
- Plasma Etch Rates of Porous Silica Low-$k$ Films with Different Dielectric Constants
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- Theoretical Investigation of Dielectric Constant and Elastic Modulus of Three-Dimensional Isotropic Porous Silica Films with Cubic and Disordered Pore Arrangements
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- Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics
- Role of Frictional Force on the Polishing Rate of Cu Chemical Mechanical Polishing
- Direct Observation of Electromigration and Induced Stress in Cu Nanowire
- Theoretical Investigation into Effects of Pore Size and Pore Position Distributions on Dielectric Constant and Elastic Modulus of Two-Dimensional Periodic Porous Silica Films
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