Mechanical Property and Network Structure of Porous Silica Films
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概要
- 論文の詳細を見る
We investigated the relationship between Young's elastic modulus of a series of spin-on sol-gel silica films and the shift of the longitudinal-optical component of the asymmetric stretching vibration mode of Si–O–Si (LO4), by nanoindentation measurements and Fourier transform infrared reflection spectroscopy. With the increase of the annealing temperature from 673–1073 K in air, the position of the LO4 mode reflection peak shifted from 1203 to 1253 cm-1, in parallel with the increase of Young's elastic modulus. The correlation between the LO4 peak position and Young's elastic modulus was also confirmed among a set of silica films in which the preparation conditions and/or the postpreparation treatment conditions were varied. It was concluded that the shift of the LO4 mode peak position is a good measure of the skeletal silica mechanical property of porous silica films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-05-15
著者
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Oku Yoshiaki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Yamada Kazuhiro
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Kikkawa Takamaro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Hata Nobuhiro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Seino Yutaka
Mirai Advanced Semiconductor Research Center Aist
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Takada Syozo
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Science And Technology
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Yamada Kazuhiro
MIRAI, Association of Super-Advanced Electronics Technologies, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takada Syozo
Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hata Nobuhiro
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kikkawa Takamaro
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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