Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics
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概要
- 論文の詳細を見る
The evidence of copper (Cu) ion drift in low-dielectric-constant (low-$k$) interlayer films was obtained for the first time by transient capacitance measurements. The charge states of the electronic states related to Cu+ ions drifted into the low-$k$ layer of Cu/low-$k$/SiO2/Si metal–insulator–semiconductor capacitors were altered by photolectron injection from the p-Si substrate by applying a positive bias to the Cu layer under UV light illumination. A decrease in the time-dependent transient capacitance $C(t)$ was attributed to the thermal emission of electrons from Cu-related electronic states. The trap level of the Cu-related electronic states was estimated to be approximately 0.9 eV below the conduction band edge in the bandgap of the low-$k$ material.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-12-15
著者
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YOSHINO Takenobu
MIRAI-Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scien
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Kikkawa Takamaro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Hata Nobuhiro
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Hata Nobuhiro
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8569, Japan
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Yoshino Takenobu
MIRAI—Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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