A Novel Photosensitive Porous Low-$k$ Interlayer Dielectric Film
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概要
- 論文の詳細を見る
The characteristics of photosensitive porous low-$k$ methylsilsesquioxane (MSQ) were investigated by electron-beam lithography. Photosensitive low-$k$ MSQ makes it possible to realize via and trench patterns for Cu damascene technology without dry etching processes in the ultra large-scale integrated (ULSI) circuit multilevel interconnect integration.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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KIKKAWA Takamaro
Research Center for Nanodevices and Systems, Hiroshima University
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吉川 公麿
広島大学:産業総合研究所
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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Sakamoto Susumu
Research And Development Division Sony Magnetic Products Inc.
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Kikkawa Takamaro
Millenium Research For Advanced Information Technology (mirai)-asrc Aist
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Kuroki Shin-Ichiro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshi
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Sakamoto Susumu
Research Center For Nanodevices And Systems Hiroshima University
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Kuroki Shin-ichiro
Research Center For Nanodevices And Systems Hiroshima University
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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