Low-$k$ Dielectric Film Patterning by X-Ray Lithography
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概要
- 論文の詳細を見る
Characteristics of photosensitive low-$k$ polymethylsilazane were investigated by use of X-ray lithography. It is found that measured pattern sizes increase with increasing X-ray exposure dose. It is also found that the depth of the patterns increases with both increasing X-ray dose and pattern size. As the result, the aspect ratio of the developed patterns was approximately 1.7.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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SHISHIGUCHI Seiichi
Association of Super-advanced Electronics Technologies (ASET)
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Kuroki Shin-ichiro
Research Center For Nanodevices And Systems Hiroshima University
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Kuroki Shin-Ichiro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Kochiya Hiroyuki
Association of Super-Advanced Electronics Technologies, Yokohama Research Center, 292 Yoshida-cho Totsuka-ku, Yokohama, Kanagawa 244-0817, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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