Influence of Bottom Electrodes and Interface Layers on (Ba,Sr)TiO3 Thin Film Leakage Current
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概要
- 論文の詳細を見る
The effect of bottom electrodes of (Ba,Sr)TiO3 (BST) thin film capacitors on leakage current characteristics was investigated. Iridium (Ir), titanium (Ti) and tantalum (Ta) bottom electrodes and SiN interface layer were deposited prior to BST deposition. On the basis of time-dependent and temperature-dependent leakage current characteristics, the leakage mechanism was investigated. It is found that the leakage current in BST with the Ta bottom electrode (Ir/BST/Ta/Si) is dominated by dielectric relaxation current due to the existence of thick TaOx. Leakage currents in BST with the Ir bottom electrode (Ir/BST/IrOx/Ir/Si) and BST on Si substrate (Ir/BST/SiO2/Si) were determined by dielectric relaxation characteristics at low electric field and by Poole–Frenkel emission at high electric field. The leakage current in BST with the Ti bottom electrode (Ir/BST/Ti/Si) was dominated by Poole–Frenkel emission at the range of applied field.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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KIKKAWA Takamaro
Research Center for Nanodevices and Systems, Hiroshima University
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Yamato Masaki
Research Center For Nanodevices And Systems Hiroshima University
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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YAMADA Hiroshi
Research & Development Division, Daido Steel Co., Ltd.
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Yamato Masaki
Research Center for Nanodevice and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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