A 5.4--9.2 GHz 19.5 dB Complementary Metal--Oxide--Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier
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概要
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In this work, we present an ultrawide-band (UWB) complementary metal--oxide--semiconductor (CMOS) low-noise amplifier (LNA) for wireless communication in the upper UWB band, that is, from 5.4--9.2 GHz bandwidth with a wide-band 50 $\Omega$ input matching network in front of the LNA. A three-stage cascode-topology-based LNA with high-transconductance MOS transistors, was employed to improve the voltage gain up to 23 dB at 7.5 GHz, with 4.5--9.2 GHz 3 dB bandwidth. The maximum output power $S_{21}$ was 19.5 dB at 7.3 GHz, with 5.4--9.2 GHz 3 dB bandwidth. The input matching circuit was designed with a reduced number of passive elements, resulting in an input reflection coefficient $S_{11}$ of less than $-10$ dB from 4.5--9.2 GHz. The noise figure of the LNA was as low as 3.5 dB and the input-referred third-order intercept point (IIP3) was $-8$ dBm. The LNA has output reflection coefficient $S_{22}$ of less than $-10$ dB from 5--7 GHz and a good reverse isolation, that is, $S_{12}$ of $< -45$ dB in the entire UWB, due to a cascode topology. The LNA was fabricated using 180 nm CMOS technology, which consumes 56 mW power at 1.8 V power supply. In this paper, we also demonstrate a wireless communication of 7 GHz Gaussian monocycle pulse (GMP) by horn antennas and the LNA from 20 cm transmission distance.
- 2011-04-25
著者
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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Sasaki Nobuo
Research Center For Nanodevices And Systems Hiroshima University
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Kubota Shinichi
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Sasaki Nobuo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Azhari Afreen
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Toya Akihiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Toya Akihiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kubota Shinichi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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