Azhari Afreen | Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
スポンサーリンク
概要
- Azhari Afreenの詳細を見る
- 同名の論文著者
- Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japanの論文著者
関連著者
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Sasaki Nobuo
Research Center For Nanodevices And Systems Hiroshima University
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Azhari Afreen
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Kimoto Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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Kubota Shinichi
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Sasaki Nobuo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Nobuo Sasaki
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Toya Akihiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Takamaro Kikkawa
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Toya Akihiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kubota Shinichi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
著作論文
- A 5.4--9.2 GHz 19.5 dB Complementary Metal--Oxide--Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier
- A 3.5–4.5 GHz Complementary Metal–Oxide–Semiconductor Ultrawideband Receiver Frontend Low-Noise Amplifier with On-Chip Integrated Antenna for Interchip Communication