Characteristics of Integrated Antenna on Si for On-Chip Wireless Interconnect
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概要
- 論文の詳細を見る
We have performed the detailed characterization of small size integrated dipole antenna on Si for use in on-chip wireless interconnection and compared the measured characteristics with results obtained by 3-D finite element simulation. Basic characteristics such as the effects of antenna length, distance and rotation angle on the transmission gain of the integrated antenna are examined. The measured transmission gain of approximately $-54$ dB at a distance of 1 cm for a 0.02 mm2 dipole antenna at 20 GHz showed the feasibility of using the integrated dipole antenna for wireless clock distribution in future ultra LSI (ULSI) chips at frequencies of ${\sim}20$ GHz or higher. We have also shown that it is possible to minimize any reduction in transmission gain due to the interference from the local interconnect metal lines by choosing the proper layout.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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WATANABE Shinji
Research Center for Nanodevices and Systems, Hiroshima University
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Rashid A.
Research Center For Nanodevices And Systems Hiroshima University
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Kikkawa Takamaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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