Signal Transmission Characteristics between Si Chips with Air Gap using Si Integrated Dipole Antennas
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概要
- 論文の詳細を見る
Transmission characteristics of integrated linear dipole antennas fabricated on Si substrates were investigated for inter-chip signal transmission of wireless interconnections of Si ultra-large scale integrated circuits. Linear dipole antennas 1–6 mm long were fabricated on oxidized P-type Si substrates with resistivities of 10, 79.6, and 2290 $\Omega$$\cdot$cm. The transmission characteristics were investigated in the frequency and time domains. The transmission gain of a 4-mm-long dipole antenna fabricated on a 2.29 k$\Omega$$\cdot$cm resistivity Si substrate was $-10$ dB for a distance of 3 mm. A Gaussian monocycle pulse with a pulse width of 70 ps and a bandwidth of 20 GHz was transmitted and received successfully between Si chips with an air gap.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Kimoto Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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Kimoto Kentaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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