Properties of Sr7Nb13O36/Nb2O5/Sr7Nb13O36 Laminated Films for Gigabit Memory Capacitors
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概要
- 論文の詳細を見る
Properties of Sr7Nb13O36/Nb2O5/Sr7Nb13O36 laminated films for gigabit memory capacitors were investigated. The equivalent oxide thicknesses (EOT), dielectric constant, band gap and leakage current for a single layer Sr7Nb13O36 having 10 nm film thickness were 1.12 nm, 34.8, 4.45 eV and $3\times 10^{-9}$ A/cm2 at 1 V, respectively. Those properties for a single layer Nb2O5 having 20 nm thickness were 0.72 nm, 108, 4.25 eV, and $2\times 10^{-8}$ A/cm2, respectively. The Sr7Nb13O36/Nb2O5/Sr7Nb13O36 laminated films satisfied the EOT of 0.77 nm, effective dielectric constant of 51, effective band gap of 4.35 eV and leakage current density of $6.4\times 10^{-9}$ A/cm2 at 1 V. The fraction of applied voltage across the Sr7Nb13O36 film was dominant so that the voltage across the high dielectric constant Nb2O5 film could be reduced. The Sr7Nb13O36/Nb2O5/Sr7Nb13O36 laminated film is a solution for gigabit memory capacitors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-07-25
著者
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Yamato Masaki
Research Center for Nanodevice and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Hara Hikaru
Research Center for Nanodevice and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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