Quantitative Determination of Complex Dielectric Function of Amorphous Silicon Dioxide on Silicon Substrate from Transmission Spectrum

概要

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Infrared spectroscopy is a powerful tool for characterizing the molecular bonding structures of oxide films. Using parametric analysis, we could determine both real and imaginary parts of the complex dielectric function of oxide thin films supported on a substrate. In this work, the complex dielectric function of a silicon dioxide thin film on a silicon substrate in the infrared region (400–1400 cm-1) was determined quantitatively by fitting an optical model for the transmittance of an air/silicon/insulator/air laminated structure to experimental data. The adsorption due to the ionic vibration of siloxane bonding was parameterized with the sum of Lorentz damping oscillators convoluted with a Gaussian distribution. The incidence angle of light was changed from nearly normal (5° off) to oblique (55–65° off), and all of the data was simultaneously fitted. Transverse optic and longitudinal optic functions were calculated from the dielectric function. Good agreement was found between the peak frequency of each function and that calculated by another method.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-12-25