Optimized Source/Drain Ion Implantation Conditions for P-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor Formation
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-12-15
著者
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Matsuda T
Diax Co. Ltd. Kasugai Jpn
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SHISHIGUCHI Seiichi
Association of Super-advanced Electronics Technologies (ASET)
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MINEJI Akira
Advanced Technology Development Division, NEC Electronics Corporation
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MATSUDA Tomoko
Advanced Technology Development Division, NEC Electronics Corporation
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Mineji Akira
Advanced Technology Development Division Nec Electronics Corporation
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Matsuda Tomoko
Advanced Technology Development Division Nec Electronics Corporation
関連論文
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