Sunami Hideo | Research Center For Nanodevice And Systems Hiroshima University
スポンサーリンク
概要
関連著者
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Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
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SUNAMI Hideo
Research Center for Nanodevices and Systems, Hiroshima University
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Okuyama Kiyoshi
Research Center For Nanodevice And Systems Hiroshima University
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Tabei Tetsuo
Research Center For Nanodevices And Systems (rcns) Hiroshima University
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Okuyama Kiyoshi
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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KUMAGAWA Masashi
Research Institute of Electronics, Shizuoka University
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Nishizawa Jun-ichi
Research Institute Of Electrical Communication Tohoku University
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Nishizawa Jun-ichi
Research Institute Of Electrical Cammunication Tohoku University
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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Kumagawa Masashi
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut
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Kobayashi Kei
Research Center For Nanodevices And Systems Hiroshima University
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Sunami Hideo
Research Institute Of Electrical Communication Tohoku University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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ETO Takanori
Research Center for Nanodevices and Systems, Hiroshima University
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Eto Takanori
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Sugimura Atsushi
Research Center For Nanodevice And Systems Hiroshima University
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Yoshikawa Koji
Research Center For Nanodevice And Systems Hiroshima University
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Maeda Kazuhiko
Central Glass Co. Ltd
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Kajikawa Kenta
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Hirata Tomoki
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Ishikawa Tomohiro
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Khosru Quazi
Research Center For Nanodevices And Systems Hiroshima University
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Yoshino Takenobu
Research Center For Nanodevices And Systems Hiroshima University
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YOSHIKAWA KOJI
Research Institute for Food Science, Kyoto University
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Murakami Yuji
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Sunami Hideo
Research Center For Nanodevices And Systems Hiroshima University
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Kidera Toshirou
Research Center For Nanodevices And Systems Hiroshima University
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TERASAKI Takeshi
Research Institute of Electrical Communication, Tohoku University
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TABEI Tetsuo
Research Center for Nanodevices and Systems, Hiroshima University
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MAEDA Kazuhiko
Central Glass Co., LTD
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SUGIMURA Atsushi
Research Center for Nanodevice and Systems, Hiroshima University
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Tabei Tetsuo
Research Center For Nanodevices And Systems Hiroshima University
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Takase Akihiro
Research Center For Nanodevices And Systems Hiroshima University
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OHKURA Kensaku
Research Center for Nanodevices and Systems (RCNS), Hiroshima University
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Tanushi Yuichiro
Research Center For Nanodevices And Systems Hiroshima University
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Amemiya Yoshiteru
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Kayaba Yasuhisa
Research Center For Nanodevices And Systems Hiroshima University
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Terasaki Takeshi
Research Institute Of Electrical Communication Tohoku University
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Suzuki Masato
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Ikeda Takeshi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kuroda Akio
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kudo Takashi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kasama Toshihiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Hata Yumehiro
Department of Molecular Biotechnology, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Tokonami Shiho
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Cho Yoshinori
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Monzen Tomomi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Amemiya Yoshiteru
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Cho Yoshinori
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Khosru Quazi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Yoshino Takenobu
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Kajikawa Kenta
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Hirata Tomoki
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Tanushi Yuichiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Sunami Hideo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Sunami Hideo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan *Present address: Semiconductor Company, Toshiba Corp., Shinsugita 8, Isogo, Yokohama, Kanagawa, Japan
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Sunami Hideo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Sunami Hideo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Sunami Hideo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Sunami Hideo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Takase Akihiro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan *Present address: Semiconductor Company, Toshiba Corp., Shinsugita 8, Isogo, Yokohama, Kanagawa, Japan
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Okuyama Kiyoshi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Okuyama Kiyoshi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Okuyama Kiyoshi
Research Center for Nanodevices and Systems, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Tabei Tetsuo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Tabei Tetsuo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Tabei Tetsuo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kidera Toshirou
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan *Present address: Semiconductor Company, Toshiba Corp., Shinsugita 8, Isogo, Yokohama, Kanagawa, Japan
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Yoshikawa Koji
Research Center for Nanodevices and Systems, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Sugimura Atsushi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
著作論文
- An Optimized Silicidation Technique for Source and Drain of FINFET
- Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
- An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors
- Epitaxial Growth with Light Irradiation
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
- Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors
- Characterization of Subthreshold Behavior of Narrow-Channel SOI nMOSFET with Additional Side-Gate Electrodes
- Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing
- Field-Shield Trench Isolation with Self-Aligned Field Oxide
- Control of Subthreshold Characteristics of Narrow-Channel Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Transistor with Additional Side Gate Electrodes
- Potentiality of Metal-Oxide-Semiconductor Silicon Optical Modulator Based on Free Carrier Absorption
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal–Oxide–Semiconductor Capacitors
- Optimized Silicidation Technique for Source and Drain of Fin-Type Field-Effect Transistor
- Proposal of a Metal–Oxide–Semiconductor Silicon Optical Modulator Based on Inversion-Carrier Absorption