Characterization of Subthreshold Behavior of Narrow-Channel SOI nMOSFET with Additional Side-Gate Electrodes
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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YOSHIKAWA KOJI
Research Institute for Food Science, Kyoto University
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Okuyama Kiyoshi
Research Center For Nanodevices And Systems Hiroshima University
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SUNAMI Hideo
Research Center for Nanodevices and Systems, Hiroshima University
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Okuyama Kiyoshi
Research Center For Nanodevice And Systems Hiroshima University
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Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
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Yoshikawa Koji
Research Center For Nanodevice And Systems Hiroshima University
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