Okuyama Kiyoshi | Research Center For Nanodevices And Systems Hiroshima University
スポンサーリンク
概要
関連著者
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Okuyama Kiyoshi
Research Center For Nanodevices And Systems Hiroshima University
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Okuyama Kiyoshi
Research Center For Nanodevice And Systems Hiroshima University
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SUNAMI Hideo
Research Center for Nanodevices and Systems, Hiroshima University
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Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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Kobayashi Kei
Research Center For Nanodevices And Systems Hiroshima University
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ETO Takanori
Research Center for Nanodevices and Systems, Hiroshima University
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Eto Takanori
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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野口 知雄
九歯大・生化
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野口 知雄
九歯大生化
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MIDORIKAWA YUICHIRO
Research Laboratories, Yamasa Shoyu Co., Ltd.
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YOSHIKAWA KOJI
Research Institute for Food Science, Kyoto University
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Hamamoto Tetsuo
The Institute of Physical and Chemical Research (RIKEN)
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SUGIMURA Atsushi
Research Center for Nanodevice and Systems, Hiroshima University
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NOGUCHI Toshitada
Research Laboratories, Yamasa Shoyu Co., Ltd.
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HAMAMOTO Tomoki
Research & Development Division, Yamasa Corporation
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Okuyama K
Biochemicals Division Yamasa Corporation
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MIDORIKAWA Yuichiro
Biochemicals Division, Yamasa Corporation
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Sugimura Atsushi
Research Center For Nanodevice And Systems Hiroshima University
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Noguchi Toshitada
Research Laboratories Yamasa Corporation
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Midorikawa Y
Biochemicals Division Yamasa Corporation
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Midorikawa Yuichiro
Research Laboratories Yamasa Corporation
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Yoshikawa Koji
Research Center For Nanodevice And Systems Hiroshima University
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Okuyama Kiyoshi
Biochemicals Division, Yamasa Corporation
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OKUYAMA Kiyoshi
Department of Physics,Ibaraki University
著作論文
- An Optimized Silicidation Technique for Source and Drain of FINFET
- Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
- An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors
- Characterization of Subthreshold Behavior of Narrow-Channel SOI nMOSFET with Additional Side-Gate Electrodes
- Cloning and Expression of Purine Nucleoside Phosphorylase I Gene from Bacillus stearothermophilus TH 6-2