Shibahara Kentaro | Research Center For Nanodevices And Systems Hiroshima University
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概要
- SHIBAHARA Kentaroの詳細を見る
- 同名の論文著者
- Research Center For Nanodevices And Systems Hiroshima Universityの論文著者
関連著者
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama S
Kyushu Univ. Fukuoka Jpn
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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HIROSE Masataka
Research Center for Integrated Systems, Hiroshima University
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EGUSA Kazuhiko
Research Center for Nanodevices and Systems, Hiroshima University
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Egusa Kazuhiko
Research Center For Nanodevices And Systems Hiroshima University
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Eto Takanori
Research Center For Nanodevices And Systems Hiroshima University
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Hirose Masataka
Research Center For Integrated Systems Hiroshima University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Nagata Tetsuya
Hitachi Research Laboratory Hitachi Ltd.
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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HIROSE Masataka
Faculty of Engineering, Hiroshima University
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NAMBA Tohru
Research Center for Integrated Systems, Hiroshima University
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UEHARA Akihito
Research Center for Integrated Systems, Hiroshima University
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DOI Takeshi
Department of Electrical Engineering, Hiroshima University
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NAGATA Takahiko
Research Center for Integrated Systems, Hiroshima University
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KURODA Yasuhide
Research Center for Integrated Systems, Hiroshima University
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IWATA Atushi
Department of Electrical Engineering, Hiroshima University
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FURUMOTO Hiroaki
Research Center for Nanodevices and Systems, Hiroshima University
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Nagata Takahiro
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Okuyama Kiyoshi
Research Center For Nanodevices And Systems Hiroshima University
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Furumoto Hiroaki
Research Center For Nanodevices And Systems Hiroshima University
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Kobayashi Kei
Research Center For Nanodevices And Systems Hiroshima University
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SUNAMI Hideo
Research Center for Nanodevices and Systems, Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Nagata T
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Namba Tohru
Research Center For Integrated Systems Hiroshima University
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Doi Takeshi
Faculty Of Engineering Hiroshima University
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Doi T
Department Of Bio- And Geoscience Graduate School Of Science Osaka City University
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Uehara Akihito
Department Of Applied Chemistry Kogakuin University
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Kamesaki Koji
Research Center For Nanodevices And Systems Hiroshima University
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Hirose M
Materials Research Center Tdk Corporation
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ETO Takanori
Research Center for Nanodevices and Systems, Hiroshima University
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Kuroda Yasuhide
Research Center For Integrated Systems Hiroshima University
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Doi Takeshi
Department Of Bio- And Geoscience Graduate School Of Science Osaka City University
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Okuyama Kiyoshi
Research Center For Nanodevice And Systems Hiroshima University
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Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Iwata A
Hiroshima Univ. Higashi-hiroshima‐shi Jpn
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NAGATA Takahiro
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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Yokoyama S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Yokoyama S
Communication Res. Lab. Kobe Jpn
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KAWAKAMI Nobuyuki
Electronics Research Laboratory, Kobe Steel, Ltd.
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IWATA Atsushi
A-R-Tec Corporation
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MAEDA Jun-ichi
Research Center for Nanodevices and Systems, Hiroshima University
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SASAKI Yasushi
Research Center for Nanodevices and Systems, Hiroshima University
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DIETZ Nikolaus
Research Center for Nanodevices and Systems, Hiroshima University
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MIYAZAKI Seiichi
Faculty of Engineering, Hiroshima University
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Dietz Nikolaus
Research Center For Nanodevices And Systems Hiroshima University:department Of Physics North Carolin
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Maeda Jun-ichi
Research Center For Nanodevices And Systems Hiroshima University
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KOH Meishoku
Research Center for Nanodevices and Systems, Hiroshima University
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SHIRAKATA Toru
Research Center for Nanodevices and Systems, Hiroshima University
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SEO Eisuke
Research Center for Nanodevices and Systems, Hiroshima University
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TSUNO Morikazu
Research Center for Integrated Systems, Hiroshima University
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Seo Eisuke
Research Center For Nanodevices And Systems Hiroshima University
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Shirakata Toru
Research Center For Nanodevices And Systems Hiroshima University
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NAKAJIMA Anri
Research Center for Nanodevices and Systems, Hiroshima University
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Yoshida Masayoshi
Research Center For Nanodevices And Systems Hiroshima University
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Iwata Atsushi
Electronic Materials And Devices Division Mitsubishi Petrochemical Co. Ltd.
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HATANO Tsuyoshi
Research Center for Nanodevices and Systems, Hiroshima University
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NOMURA Akihiro
Research Center for Nanodevices and Systems, Hiroshima University
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Nakajima A
Research Center For Nanodevices And Systems Hiroshima University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Koh Meishoku
Research Center For Nanodevices And Systems Hiroshima University:crest Japan Science And Technology
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Nomura Akihiro
Research Center For Nanodevices And Systems Hiroshima University
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Tsuno M
The Research Center For Nanodevices And Systems Hiroshima University
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Tsuno Morikazu
Research Center For Integrated Systems Hiroshima University
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Aoki Y
The Reserch Center For Nanodevices And Systems Hiroshima University
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Hatano T
Research Center For Nanodevices And Systems Hiroshima University
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AOKI Yasuyuki
Research Center for Nanodevices and Systems, Hiroshima University
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KUGIMIYA Toshihiro
Electronics and Information Technology Laboratory, Kobe Steel Ltd.
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Kugimiya Toshihiro
Electronics And Information Technology Laboratory Kobe Steel Ltd.
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Hatano Tsuyoshi
Research Center For Nanodevices And Systems Hiroshima University
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Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kawakami Nobuyuki
The Electronics Research Laboratory Kobe Steel Corporation
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Kawakami Nobuyuki
Electronics Research Laboratory Kobe Steel Ltd.
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Hirose Masataka
Faculty Of Engineering Hiroshima University
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Sano Kosuke
Research Center For Nanodevices And Systems Hiroshima University
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Doi T
Univ. Tokyo Tokyo Jpn
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Hosoi Takuji
Research Center For Nanodevices And Systems Hiroshima University
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Sano Kousuke
Research Center For Nanodevices And Systems Hiroshima University
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Matsuno Akira
Research Center For Nanodevices And Systems Hiroshima University
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HINO Masaki
Research Center for Nanodevices and Systems, Hiroshima University
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OOISHI Norihiro
Research Center for Nanodevices and Systems, Hiroshima University
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HOSAWA Kosei
Research Center for Nanodevices and Systems, Hiroshima University
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MAEDA Nobuhide
Research Center for Nanodevices and Systems, Hiroshima University
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Hosawa Kosei
Research Center For Nanodevices And Systems Hiroshima University
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Maeda Nobuhide
Research Center For Nanodevices And Systems Hiroshima University
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Ooishi Norihiro
Research Center For Nanodevices And Systems Hiroshima University
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Sasaki Yasushi
Research Center For Nanodevices And Systems Hiroshima University
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Hino Masaki
Research Center For Nanodevices And Systems Hiroshima University
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Matsuno Akira
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
著作論文
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- New Ar-Plasma Cleaning Process for Reduction of Al/TiSi_2 Contact Resistance
- Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
- Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO_2/Si Interface
- Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO_2/Si Interface
- Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process
- Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
- An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors
- Precise Depth Profiling of Sub-keV Implanted Arsenic
- Function of Phase Switch Layer for Ultra Shallow Junction Formation by Green Laser Annealing
- Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate
- Pd_2Si Fully-Silicided Gate : Kinetics of Silicide Formation and Workfunction Tuning
- Ultra-Shallow Junction Formation with Antimony Implantation(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Gate-extension overlap control by Sb tilt implantation