Kamesaki Koji | Research Center For Nanodevices And Systems Hiroshima University
スポンサーリンク
概要
関連著者
-
SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
-
EGUSA Kazuhiko
Research Center for Nanodevices and Systems, Hiroshima University
-
Egusa Kazuhiko
Research Center For Nanodevices And Systems Hiroshima University
-
Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
-
Kamesaki Koji
Research Center For Nanodevices And Systems Hiroshima University
-
Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
-
Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
-
Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
-
FURUMOTO Hiroaki
Research Center for Nanodevices and Systems, Hiroshima University
-
Furumoto Hiroaki
Research Center For Nanodevices And Systems Hiroshima University
著作論文
- Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO_2/Si Interface
- Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO_2/Si Interface