Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO_2/Si Interface

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-04-30

著者

• SHIBAHARA Kentaro

  Research Center for Nanodevices and Systems, Hiroshima University

• EGUSA Kazuhiko

  Research Center for Nanodevices and Systems, Hiroshima University

• FURUMOTO Hiroaki

  Research Center for Nanodevices and Systems, Hiroshima University

• Egusa Kazuhiko

  Research Center For Nanodevices And Systems Hiroshima University

• Furumoto Hiroaki

  Research Center For Nanodevices And Systems Hiroshima University

• Shibahara K

  Research Center For Nanodevices And Systems Hiroshima University

• Kamesaki Koji

  Research Center For Nanodevices And Systems Hiroshima University

• Shibahara K

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Shibahara Kentaro

  Research Center For Nanodevices And Systems Hiroshima University

• Shibahara Kentaro

  Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan

関連論文

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• A Study of Electrical Characteristics Improvements in Sub-0.1 μm Gate Length MOSFETs by Low Temperature Operation
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• Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
• Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
• Fabrication of 100 nm Width Fine Active-Region Using LOCOS Isolation(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO_2/Si Interface
• Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO_2/Si Interface
• Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process
• Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
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• Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
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• Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n+/p Junctions by Heat-Assisted Excimer Laser Annealing

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