Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-01-30

著者

• YOKOYAMA Seiji

  School of Material Science, Japan Advanced Institute of Science and Technology

• YOKOYAMA Shin

  Research Center for Nanodevices and Systems, Hiroshima University

• Yokoyama Seiji

  School Of Material Science Japan Advanced Institute Of Science And Technology

• SHIBAHARA Kentaro

  Research Center for Nanodevices and Systems, Hiroshima University

• NAKAJIMA Anri

  Research Center for Nanodevices and Systems, Hiroshima University

• Yoshida Masayoshi

  Research Center For Nanodevices And Systems Hiroshima University

• Yokoyama Shin

  Research Center For Integrated Systems Hiroshima University

• Yokoyama S

  Research Center For Nanodevices And Systems Hiroshima University

• HATANO Tsuyoshi

  Research Center for Nanodevices and Systems, Hiroshima University

• NOMURA Akihiro

  Research Center for Nanodevices and Systems, Hiroshima University

• Shibahara K

  Research Center For Nanodevices And Systems Hiroshima University

• Nakajima A

  Research Center For Nanodevices And Systems Hiroshima University

• Nakajima Anri

  Research Center For Nanodevices And Systems Hiroshima University

• Nomura Akihiro

  Research Center For Nanodevices And Systems Hiroshima University

• Hatano T

  Research Center For Nanodevices And Systems Hiroshima University

• Hatano Tsuyoshi

  Research Center For Nanodevices And Systems Hiroshima University

• Yokoyama S

  Kyushu Univ. Fukuoka Jpn

• Shibahara Kentaro

  Research Center For Nanodevices And Systems Hiroshima University

• Shibahara Kentaro

  Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan

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