Nakajima Anri | Research Center For Nanodevices And Systems Hiroshima University
スポンサーリンク
概要
関連著者
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Zhu Shiyang
Research Center For Nanodevices And Systems Hiroshima University
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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NAKAJIMA Anri
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Nakajima A
Research Center For Nanodevices And Systems Hiroshima University
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Nomura Akihiro
Research Center For Nanodevices And Systems Hiroshima University
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Miyake Hideharu
Elpida Memory Inc.
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Ohashi Takuo
Elpida Memory Inc.
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OHKURA Kensaku
Research Center for Nanodevices and Systems (RCNS), Hiroshima University
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Kitade Tetsuya
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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Khosru Quazi
Research Center For Nanodevices And Systems Hiroshima University
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Kikkawa Takamaro
Research Center For Nanodevices And Systems Hiroshima University
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HATANO Tsuyoshi
Research Center for Nanodevices and Systems, Hiroshima University
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KAWAMURA Kensaku
Research Center for Nanodevices and Systems, Hiroshima University
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KIDERA Toshirou
Research Center for Nanodevices and Systems, Hiroshima University
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Ohba Kenji
Research Center For Nanodevices And Systems Hiroshima University
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Kidera Toshirou
Research Center For Nanodevices And Systems Hiroshima University
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Hatano T
Research Center For Nanodevices And Systems Hiroshima University
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Hatano Tsuyoshi
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama S
Kyushu Univ. Fukuoka Jpn
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Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
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Ohkura Kensaku
Research Center For Nanodevices And Systems Hiroshima University
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KITADE Tetsuya
Research Center for Nanodevices and Systems, Hiroshima University
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Kawamura Kensaku
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kasama Toshihiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kikkawa Takamaro
Research Center for Nanodevice and Systems (RCNS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Ishikawa Tomohiro
Research Institute For Nanodevice And Bio Systems Hiroshima University
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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Yokoyama Yuichi
Research Center For Nanodevices And Systems Hiroshima University
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Yoshino Takenobu
Research Center For Nanodevices And Systems Hiroshima University
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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Ito Yuhei
Research Center For Nanodevices And Systems Hiroshima University
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Yoshida Masayoshi
Research Center For Nanodevices And Systems Hiroshima University
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Murakami Yuji
Research Institute For Nanodevice And Bio Systems Hiroshima University
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NOMURA Akihiro
Research Center for Nanodevices and Systems, Hiroshima University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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ISHII Hiroyuki
Research Center for Nanodevices and Systems, Hiroshima University
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OHBA Kenji
Research Center for Nanodevices and Systems, Hiroshima University
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KIDERA Toshiro
Research Center for Nanodevices and Systems, Hiroshima University
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Tabei Tetsuo
Research Center For Nanodevices And Systems (rcns) Hiroshima University
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Okuyama Kiyoshi
Research Center For Nanodevice And Systems Hiroshima University
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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OOBA Kenji
Research Center for Nanodevices and Systems, Hiroshima University
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NAKASHIMA Yoshimitsu
Research Center for Nanodevices and Systems, Hiroshima University
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Tanushi Yuichiro
Research Center For Nanodevices And Systems Hiroshima University
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Amemiya Yoshiteru
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Nakashima Yoshimitsu
Research Center For Nanodevices And Systems Hiroshima University
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Ooba Kenji
Research Center For Nanodevices And Systems Hiroshima University
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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FUJII Shuntaro
Graduate School of Engineering, Tohoku University
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Kayaba Yasuhisa
Research Center For Nanodevices And Systems Hiroshima University
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Suzuki Masato
Research Center For Nanodevices And Systems Hiroshima University
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Ishii Hiroyuki
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Ikeda Takeshi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kuroda Akio
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kudo Takashi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Hata Yumehiro
Department of Molecular Biotechnology, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Tokonami Shiho
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Cho Yoshinori
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Monzen Tomomi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Amemiya Yoshiteru
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Cho Yoshinori
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Khosru Quazi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Matsushita Koki
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Yoshino Takenobu
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Ohashi Takuo
Elpida Memory, Inc., 7-10 Yoshikawa-kogyo-danchi, Higashi-Hiroshima, Hiroshima 739-0198, Japan
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Tanushi Yuichiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Sunami Hideo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Sunami Hideo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Kuroki Shin-Ichiro
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Ohkura Kensaku
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Ohkura Kensaku
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Okuyama Kiyoshi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Tabei Tetsuo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Fujii Shuntaro
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Yokoyama Yuichi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Kitade Tetsuya
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Ito Takashi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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Fujiaki Tomo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Zhu Shiyang
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Zhu Shiyang
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
著作論文
- Improvement of mobility and NBTI reliability in MOSFETs with ALD-Si-nitride/SiO_2 stack dielectrics and p^+-poly-Si gate
- Bipolar Voltage Pulse Induced Current : A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structures
- Fabrication Technologies for Double-SiO_2-Barrier Metal-Oxide-Semiconductor Transistor with a Poly-Si Dot
- Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
- Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics
- Conduction Mechanism in Extremely Thin Poly-Si Wires : Width Dependence of Coulomb Blockade Effect
- Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires
- Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing
- Influence of bulk bias on NBTI of pMOSFETs with ultrathin SiON gate dielectric
- Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature
- Room Temperature Operation of an Exclusive-OR Circuit Using a Highly-Doped Si Single-Electron Transistor
- Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method
- Application of Highly-Doped Si Single-Electron Transistors to an Exclusive-NOR Operation
- Silicon Single-Electron Memory Having in-Plane Dot with Double Gates
- Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2 Stack Dielectrics
- In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Electrical Characteristics of Si Single-Electron Transistor Based on Multiple Islands
- Atomic Layer Deposition of HfO2 Using Hf[N(C2H5)2]4 and H2O
- Conduction Path Fluctuation in Silicon Two-Dimensional Tunnel Junction Array
- Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors
- Atomic Layer Deposition of HfO2 and Si Nitride on Ge Substrates
- Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature
- Annealing Temperature Dependence on Nickel–Germanium Solid-State Reaction
- Application of Highly-Doped Si Single-Electron Transistors to an Exclusive-NOR Operation