Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors
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概要
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To investigate the effect of charged substances on the properties of ion-sensitive field-effect transistors (ISFETs), the site percolation property of a finite-size two-dimensional square-lattice system was analyzed by Monte Carlo simulation. We found that the variation in the aspect ratio (width/length) of the channel leads to two important features: the sensitivity of the ISFET is enhanced with a decrease in width and/or an increase in length; however, ISFET having a rather wide and/or short channel produces the best performance in quantitative analysis. The results of this study would be applicable to the design of an ultrasensitive and quantitatively analyzable ISFET.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-10-25
著者
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Kasama Toshihiro
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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