Conduction Path Fluctuation in Silicon Two-Dimensional Tunnel Junction Array
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概要
- 論文の詳細を見る
We developed a self-organization fabrication process for a two-dimensional small tunnel junction array (2D-TJA). A dot is naturally formed by the proximity effect in the electron beam lithography at the place where the horizontal and vertical resist wire patterns cross. A Si 2D-TJA with $10{\times} 10$ dots shows several different patterns of Coulomb oscillation corresponding to different carrier conduction paths in the array at 4.2 K. This conduction path fluctuation is considered to occur owing to the stochastic characteristics of the carrier tunneling of junctions. We showed the possibility of realizing a new functional device of a stochastic associative processing circuit by using a 2D-TJA as its bit comparator.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-06-25
著者
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Matsushita Koki
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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