Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-02-10
著者
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Zhu Shiyang
Research Center For Nanodevices And Systems Hiroshima University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Miyake Hideharu
Elpida Memory Inc.
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Ohashi Takuo
Elpida Memory Inc.
関連論文
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- Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature
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- Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature
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