Atomic Layer Deposition of HfO2 Using Hf[N(C2H5)2]4 and H2O
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概要
- 論文の詳細を見る
HfO2 thin films were formed by atomic layer deposition (ALD) using a tetrakis(diethylamino)hafnium (TDEAH) + H2O gas system at 300 °C on various Si surfaces: bare Si, chemical oxide, and thermal oxide. The growth showed no incubation period under all surface conditions. The deposition rate was estimated to be 0.10 nm/cycle for deposition on the bare Si and chemical oxide, and 0.06 nm/cycle on the thermal oxide. The deposited films were confirmed to be stoichiometric HfO2 by Rutherford backscattering spectroscopy, and Al/ALD-HfO2/SiOx/Si capacitors have comparable electrical properties with respect to recently reported data.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-15
著者
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Zhu Shiyang
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama Yuichi
Research Center For Nanodevices And Systems Hiroshima University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Yokoyama Yuichi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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