Bipolar Voltage Pulse Induced Current : A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structures
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概要
- 論文の詳細を見る
Bipolar voltage pulse induced current as a function of pulse fall/rise time through MOS capacitor is found to be related with the traps existing at the oxide/substrate interface. By a critical analysis of the current, a technique is developed to determine the energy distribution of the interface traps. Unlike the existing C-V methods, this technique does not require the knowledge of surface potential and doping profile in the semiconductor. The proposed technique can be used as a reliable tool to probe electrical stress, hot-carrier and radiation induced interfacial degradations in MOS devices with ultrathin dielectrics.
- 社団法人電子情報通信学会の論文
- 2002-06-13
著者
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Khosru Quazi
Research Center For Nanodevices And Systems Hiroshima University
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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NAKAJIMA Anri
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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