Room Temperature Operation of an Exclusive-OR Circuit Using a Highly-Doped Si Single-Electron Transistor

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Nakajima Anri

  Research Center For Nanodevices And Systems Hiroshima University

• Ohba Kenji

  Research Center For Nanodevices And Systems Hiroshima University

• OHKURA Kensaku

  Research Center for Nanodevices and Systems (RCNS), Hiroshima University

• Ohkura Kensaku

  Research Center For Nanodevices And Systems Hiroshima University

• KITADE Tetsuya

  Research Center for Nanodevices and Systems, Hiroshima University

• Kitade Tetsuya

  Research Center For Nanodevices And Systems Hiroshima University

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