Transient Response in Monolithic Mach–Zehnder Optical Modulator Using (Ba,Sr)TiO3 Film Sputtered at Low Temperature on Silicon
スポンサーリンク
概要
- 論文の詳細を見る
We have fabricated Mach–Zhender interferometers (MZIs) using the (Ba,Sr)TiO3 (BST) film sputter-deposited at 450 °C, which is a critical temperature for the process after metallization. An optical modulation of about 10% is achieved when 200 V is applied (electric field in BST is $1.2\times 10^{4}$ V/cm). However, the response time of optical modulation to step function voltage is slow (1.0–6.3 s). We propose a model for the slow transient behavior based on movable ions and a long dielectric relaxation time for the BST film, and good qualitative agreement is obtained with experimental results.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
-
Nagata Kazuma
Research Center For Nanodevices And Systems Hiroshima University
-
Tanushi Yuichiro
Research Center For Nanodevices And Systems Hiroshima University
-
Suzuki Masato
Research Center For Nanodevices And Systems Hiroshima University
-
Tanushi Yuichiro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
関連論文
- Imprint Property of Optical Mach-Zehnder Interferometer Using Sputter Deposited (Ba,Sr)TiO_3 at Low Temperature
- Low Temperature Fabrication of Monolithic Mach-Zehnder Optical Modulator on Silicon using Sputtered (Ba,Sr)TiO_3 and Mechanism of Transient Response
- Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Ba_Sr_TiO_3 Thin Films
- Structural and Optical Properties of Electro-Optic Material : Sputtered (Ba,Sr)TiO_3
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
- An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
- Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- New RAM-bus Memory System with Interchip Optical Interconnection
- Micron-Size Optical Waveguide for Optoelectronic Integrated Circuit
- Medium-Energy Ion Spectroscopy Using Ion Implanter
- New Ar-Plasma Cleaning Process for Reduction of Al/TiSi_2 Contact Resistance
- Bipolar Voltage Pulse Induced Current : A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structures
- Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Fabrication Technologies for Double-SiO_2-Barrier Metal-Oxide-Semiconductor Transistor with a Poly-Si Dot
- Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
- Effects of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering
- Influence of Organic Contaminant on Trap Generation in Thin SiO_2 of Metal-Oxide-Semiconductor Capacitors
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Design of Optically Coupled Three-Dimensional Content Addressable Memory
- Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method (Special Issue on Scientific ULSI Manufacturing Technology)
- Coupled Monte Carlo-Energy Relaxation Analysis of Hot Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistor's
- Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics
- Conduction Mechanism in Extremely Thin Poly-Si Wires : Width Dependence of Coulomb Blockade Effect
- Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires
- Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation
- Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process
- Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors
- Optical Modulator Using Metal-Oxide-Semiconductor Type Si Ring Resonator
- Magneto-optic Effect in Amorphous Bi_3Fe_5O_ Waveguide Sputtered at Room Temperature
- Photoelastic Effect in Silicon Ring Resonator
- Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
- Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference
- Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators
- Detection of Antigen--Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein
- A Study of Mach--Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer
- Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing
- Si Ring Optical Resonators for Integrated On-Chip Biosensing
- Two-Dimensional Device Simulation for Polycrystalline Silicon Thin-Film Transistor
- Fabrication of High-Density Diamond Nanotips by Electron Beam Lithography
- Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering
- Investigation of Surface Contamination on Silicon Oxide after Hydrofluoric Acid Etching by Noncontact Capacitance Method
- Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
- Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method
- Compact Branched Optical Waveguides Using High-Index-Contrast Stacked Structure
- Stacked Optical Branched Waveguides for Optical Interconnection on Si Chips
- Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System
- Influence of Sputtering Geometry on Crystallinity of Al(110) Thin Films on Offset (100)Si
- Race-Track Optical Ring Resonators with Groove Coupling
- Design and Simulation of Ring Resonator Switches using Electro-Optic Materials
- Compact Multi-Mode Optical Ring Resonators for Interconnection on Si Chips
- Characterization of Ge Photodiodes Fabricated on Vicinal Si Substrate
- Optimum Atomic Spacing for AlAs Etching in GaAs Epitaxial Lift-Off Technology
- Contact-Hole Etching with NH3-Added C5F8 Pulse-Modulated Plasma
- SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect
- Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation (Special Issue : Solid State Devices and Materials (2))
- Design and Simulation of Ring Resonator Optical Switches using Electro-Optic Materials
- Anomalous Behavior of Interface Traps of Si MOS Capacitors Contaminated with Organic Molecules
- Magneto-Optic Effect in Amorphous Bi3Fe5O12 Waveguides Sputtered at Room Temperature
- Optically Interconnected Kohonen Net for Pattern Recognition
- Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Source/Drain Formation Process
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Photoelastic Effect in Silicon Ring Resonators
- Evaluation of Front-Opening Unified Pod with Attached UV/Photocatalyst Cleaning Unit
- Effect of Light Irradiation on Native Oxidation of Silicon Surface
- Imprint Property of Optical Mach–Zehnder Interferometers Using (Ba,Sr)TiO3 Sputter-Deposited at 450 °C
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal–Oxide–Semiconductor Capacitors
- Compact Multimode Optical Ring Resonators for Interconnection on Silicon Chips
- Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Amorphous Ba0.7Sr0.3TiO3 Thin Films
- Structural and Optical Properties of Electro-Optic Material: Sputtered (Ba,Sr)TiO3
- Transient Response in Monolithic Mach–Zehnder Optical Modulator Using (Ba,Sr)TiO3 Film Sputtered at Low Temperature on Silicon
- Effect of H2 Addition during Cu Thin-Film Sputtering