Ohashi Takuo | Elpida Memory Inc.
スポンサーリンク
概要
関連著者
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Zhu Shiyang
Research Center For Nanodevices And Systems Hiroshima University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Miyake Hideharu
Elpida Memory Inc.
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Ohashi Takuo
Elpida Memory Inc.
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Ohashi Takuo
Elpida Memory, Inc., 7-10 Yoshikawa-kogyo-danchi, Higashi-Hiroshima, Hiroshima 739-0198, Japan
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Zhu Shiyang
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
著作論文
- Improvement of mobility and NBTI reliability in MOSFETs with ALD-Si-nitride/SiO_2 stack dielectrics and p^+-poly-Si gate
- Influence of bulk bias on NBTI of pMOSFETs with ultrathin SiON gate dielectric
- Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature
- Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2 Stack Dielectrics
- Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature