Ultra-Shallow Junction Formation by Green-Laser Annealing with Light Absorber
スポンサーリンク
概要
- 論文の詳細を見る
Laser annealing with nano-seconds pulse width is expected to be a useful tool for ultra-shallow junction formation. To compensate for the deep penetration depth of green laser light into Si, a metal absorber was placed on a specimen. The absorber was effective in reducing the laser energy density required to activate dopant. However, absorber formation that resulted in over-melt that increased junction depth easily occurred compared with specimens without the absorber. This problem was attributable to the absence of the increase in reflectivity by surface Si melting.
- Japan Society of Applied Physicsの論文
- 2005-06-10
著者
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Kurobe Ken-ichi
Research Center For Nanodevices And Systems Hiroshima University
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Eto Takanori
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Kurobe Ken-ichi
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Takii Eisuke
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Eto Takanori
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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