Gate-extension overlap control by Sb tilt implantation
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概要
- 論文の詳細を見る
Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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MAEDA Nobuhide
Research Center for Nanodevices and Systems, Hiroshima University
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Maeda Nobuhide
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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