Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As+ Implantation
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概要
- 論文の詳細を見る
The depth profiling of sub-keV As+ implantation for sub-10 nm junction formation was investigated. The tail slope of profiles measured by secondary ion mass spectrometry (SIMS) using 300 eV Cs+ was much gentler than that of simulated profiles. Model calculation considering the mixing effect due to Cs+ bombardment during SIMS measurement explained the SIMS tail well. This implies that accurate As depth profiling by simply lowering primary Cs+ energy is difficult because of ion gun limitations. At the surface region, a 1.4-nm-thick surface layer was found. This layer is considerably thick for the sub-10 nm junction and is thicker than 0.4 nm for 5 keV implantation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Eto Takanori
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Eto Takanori
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
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