Pd_2Si Fully-Silicided Gate : Kinetics of Silicide Formation and Workfunction Tuning
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Sano Kosuke
Research Center For Nanodevices And Systems Hiroshima University
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Hosoi Takuji
Research Center For Nanodevices And Systems Hiroshima University
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HOSAWA Kosei
Research Center for Nanodevices and Systems, Hiroshima University
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Hosawa Kosei
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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