Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
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概要
- 論文の詳細を見る
Thermal oxidation of chemical vapor deposited (CVD) cubic-SiC and fabrication of MOS diodes using a thermal oxide film were carried out. The thermal oxide was found to be SiO_2 by Auger electron spectroscopic analysis. Capacitance-voltage curves of MOS diodes measured under the dark condition showed deep depletion characteristics. Inversion characteristics were observed under the illuminated condition for the first time.
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Technical College Kyoto Institute Of Technology
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Nishino S
Kyoto Inst. Technol. Kyoto Jpn
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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SHIBAHARA Kentaro
Department of Electrical Engineering, Kyoto University
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Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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