Yokoyama S | Communication Res. Lab. Kobe Jpn
スポンサーリンク
概要
関連著者
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Yokoyama S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Yokoyama S
Communication Res. Lab. Kobe Jpn
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Tsuno M
The Research Center For Nanodevices And Systems Hiroshima University
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Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Fujii T
Nikon Corporation
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Fujii Toshiaki
Ebara Co. Ltd.
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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HIROSE Masataka
Faculty of Engineering, Hiroshima University
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HIROSE Masataka
Research Center for Integrated Systems, Hiroshima University
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TSUNO Morikazu
Research Center for Integrated Systems, Hiroshima University
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TSUNO Morikazu
the Research Center for Nanodevices and Systems, Hiroshima University
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YOKOYAMA Shin
the Research Center for Nanodevices and Systems, Hiroshima University
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SHIBAHARA Kentaro
the Research Center for Nanodevices and Systems, Hiroshima University
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Okuyama Kikuo
Device Development Center Matsushita Electric Industrial Co. Ltd.
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Seto Takafumi
Faculty Of Engineering Hiroshima University
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Tsuno Morikazu
Research Center For Integrated Systems Hiroshima University
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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OKUYAMA Kikuo
Faculty of Engineering, Hiroshima University
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SUZUKI Hidetomo
Ebara Research Co., Ltd.
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Hirose Masataka
Research Center For Integrated Systems Hiroshima University
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Shibahara Kentaro
Research Center For Nanodevices And Systems Hiroshima University
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Suzuki Hidetomo
Ebara Research Co. Ltd.
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Shibahara Kentaro
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
著作論文
- A Study of Electrical Characteristics Improvements in Sub-0.1 μm Gate Length MOSFETs by Low Temperature Operation
- New Ar-Plasma Cleaning Process for Reduction of Al/TiSi_2 Contact Resistance
- Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method (Special Issue on Scientific ULSI Manufacturing Technology)