Proposal of a Metal–Oxide–Semiconductor Silicon Optical Modulator Based on Inversion-Carrier Absorption
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概要
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A novel silicon optical modulator, originally based on inversion-carrier absorption, with a metal–oxide–semiconductor capacitor structure has been proposed and successfully developed. In this report, we will describe experimental results for a modulator that is fabricated on a silicon-on-insulator (SOI) substrate. The device consists of a 2- to 5-mm-long and 1.5-μm-thick (110) SOI core and a surrounding clad of 1.0-μm-thick buried oxide underneath and doped polysilicon on top. Infrared light absorption by inversion carriers is not large enough in the 1.55 μm wavelength regime. However, an optical response of 0.24% at a gate voltage of 11.5 V is obtained. Preliminary analysis has been also conducted for the potentiality of the optical modulator based on inversion-carrier absorption. It is predicted that this modulator will be more effective in deeper infrared regions unlike other modulators such as the Mach–Zehnder interferometer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Tabei Tetsuo
Research Center For Nanodevices And Systems (rcns) Hiroshima University
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Sunami Hideo
Research Center For Nanodevice And Systems Hiroshima University
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Kajikawa Kenta
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Hirata Tomoki
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Tabei Tetsuo
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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