Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs

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概要

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• We have investigated the effects of a high-field region on low-frequency noise (LFN) in AlGaAs/InGaAs HEMTs using a two-region model and experiments. The negative cross-correlation between the LFN generated from a low-field region and that from a high-field region is found for the first time. This negative cross-correlation depends on gate and drain voltages, and increases with gate voltage. Due to this negative cross-correlation, the observed LFN is almost constant because the cross-correlation cancels out the increase in the LFN generated from the low-field region.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Wada Masanori

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• HAMAYOSHI Shinichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• NAKAMOTO Takayuki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Higuchi Katsuhiko

  Graduate School Of Advanced Science Of Matter Hiroshima University

• Wada Masanori

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

• Hamayoshi Shinichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

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