Consideration of the Effect of the Nonspherical Distribution of Electrons in Atomic Structures
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2008-08-01
著者
-
NARITA Akira
Division of Applied Mathematics, Akita National College of Technology
-
Narita Akira
Division Of Applied Mathematics Akita National College Of Technology
-
Higuchi Masahiko
Graduate School Of Science And Engineering Shinshu University
-
HIGUCHI Katsuhiko
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
MIYASITA Mitiyasu
Graduate School of Science and Engineering, Shinshu University
-
Higuchi Katsuhiko
Graduate School Of Advanced Science Of Matter Hiroshima University
-
Miyasita Mitiyasu
Graduate School Of Science And Engineering Shinshu University
関連論文
- Polynomial Representation for Scalar Product of Unit Tensor Operators in f^n and its Application(Atomic and Molecular Physics)
- Is there any evidence for linkage on chromosome 17cen in affected Japanese sib-pairs with an intracranial aneurysm?
- Self-Consistent Relativistic Linear Augmented Plane Wave Method : Application to YbGa_2
- A Proposal for Calculating the Orbital-Dependent Exchange-Correlation Potential by Means of the Virial Theorem(Atomic and molecular physics)
- Magnetic and Fermi Surface Properties of UFeGa_5
- Fermi Surface of Th within Local-Density Functional Theory
- Fermi Surface of CeRh_2
- Expressions of Energy and Potential due to Orbital Polarization(Atomic and Molecular Physics)
- Consideration of the Effect of the Nonspherical Distribution of Electrons in Atomic Structures
- Mobility and Number Fluctuations in MOS Structures
- Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs
- Nonspherical Potential due to Orbital Polarization and Its Effect in Atoms : Approach to Hund's Second Rule in Terms of One-Electron Picture(Atomic and molecular physics)
- Mobility and Number Fluctuations in MOS Structures
- Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs
- Low-Frequency Noise Caused by Substrate Current in AlGaAs/InGaAs HEMTs
- Dominant Noise Source of Low-Frequency Fluctuation in AlGaAs/InGaAs High Electron Mobility Transistors