Low-Frequency Noise Caused by Substrate Current in AlGaAs/InGaAs HEMTs

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概要

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• The surplus low-frequency noise (LFN) caused by substrate current is investigated for high electron mobility transistors (HEMTs). The substrate current increases with decreasing the substrate thickness, which causes the surplus LFN. It is found that the surplus LFN is proportional to the square of the substrate current, and becomes dominant in the case of a thinner substrate. We also discuss the restriction on the substrate thickness from the viewpoint of LFN.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Wada Masanori

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• NAKAMOTO Takayuki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Higuchi Katsuhiko

  Graduate School Of Advanced Science Of Matter Hiroshima University

• Nakamoto Takayuki

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

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• Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs
• Mobility and Number Fluctuations in MOS Structures
• Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs
• Low-Frequency Noise Caused by Substrate Current in AlGaAs/InGaAs HEMTs
• Dominant Noise Source of Low-Frequency Fluctuation in AlGaAs/InGaAs High Electron Mobility Transistors

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