Dominant Noise Source of Low-Frequency Fluctuation in AlGaAs/InGaAs High Electron Mobility Transistors

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概要

• 論文の詳細を見る

• We present an equivalent circuit model for the low-frequency noise (LFN) in high electron mobility transistors (HEMTs). Our model correctly describes the dependence of LFN on gate voltage under low-drain-voltage conditions. Our model also allows us to investigate the location of the noise sources in HEMTs and leads to the fact that LFN arising from the extrinsic region is not negligible but dominant at a higher gate voltage.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Higuchi Katsuhiko

  Graduate School Of Advanced Science Of Matter Hiroshima University

• Higuchi Katsuhiko

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

• Nisiyama Shinya

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

• Nishiyama Shinya

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

関連論文

• A Proposal for Calculating the Orbital-Dependent Exchange-Correlation Potential by Means of the Virial Theorem(Atomic and molecular physics)
• Consideration of the Effect of the Nonspherical Distribution of Electrons in Atomic Structures
• Mobility and Number Fluctuations in MOS Structures
• Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs
• Low-Frequency Noise Caused by Substrate Current in AlGaAs/InGaAs HEMTs
• Dominant Noise Source of Low-Frequency Fluctuation in AlGaAs/InGaAs High Electron Mobility Transistors

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